Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure, a second semiconductor structure opposite to the first semiconductor structure, and an interface layer between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a memory stack having a plurality of interleaved stack conductive layers and stack dielectric layers. The second semiconductor structure includes a plurality of peripheral circuits electrically connected to the memory stack. The interface layer includes single crystalline silicon and a plurality of interconnects between the memory stack and the peripheral circuits.