Invention Grant
- Patent Title: Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
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Application No.: US17117979Application Date: 2020-12-10
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Publication No.: US11935775B2Publication Date: 2024-03-19
- Inventor: Satoshi Nagai , Manabu Takakuwa , Satoshi Usui
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20046772 2020.03.17
- Main IPC: H01L21/68
- IPC: H01L21/68 ; H01L21/67

Abstract:
According to one embodiment, there is provided a semiconductor manufacturing apparatus including a rotatable substrate stage, a first measuring mechanism and a second measuring mechanism. On the rotatable substrate stage, a laminated substrate used for manufacturing a semiconductor device is placed. The laminated substrate is formed by a first substrate and a second substrate to be laminated to each other. The first measuring mechanism measures an edge of the first substrate and an edge of the second substrate from a first direction. The second measuring mechanism measures the edge of the first substrate and the edge of the second substrate from a second direction. The second direction is a direction different from the first direction in an angle to a normal of the first substrate.
Public/Granted literature
- US20210296152A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
Information query
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