Invention Grant
- Patent Title: Burst programming of a NAND flash cell
-
Application No.: US17725911Application Date: 2022-04-21
-
Publication No.: US11935599B2Publication Date: 2024-03-19
- Inventor: Hua-Ling Cynthia Hsu , Fanglin Zhang , Victor Avila
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: SHEPPARD, MULLIN, RICHTER & HAMPTON LLP
- Agent Hector A. Agdeppa
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C7/10 ; G11C16/08 ; G11C16/24 ; G11C16/26

Abstract:
A fast burst program sequence that reduces overall NAND flash programming time is disclosed. The burst program sequence includes maintaining a charge pump in an ON state and not fully discharging the WL/BLs at the conclusion of the programming phase of each program operation. As a result, the fast burst program sequence provides total program time savings over an existing cache program sequence by eliminating the full WL/BL discharge and charge pump reset that conventionally occurs after each program operation, which in turn, allows for the transfer of next page data from the page buffer to the data latches to be hidden within the program time of a prior/current program operation.
Public/Granted literature
- US20230343397A1 BURST PROGRAMMING OF A NAND FLASH CELL Public/Granted day:2023-10-26
Information query