Invention Grant
- Patent Title: Semiconductor structure and storage circuit
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Application No.: US17392394Application Date: 2021-08-03
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Publication No.: US11930644B2Publication Date: 2024-03-12
- Inventor: Er-Xuan Ping , Xiaoguang Wang , Baolei Wu , Yulei Wu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2011475739.X 2020.12.15
- Main IPC: H10B61/00
- IPC: H10B61/00 ; G11C11/16 ; H10N50/80
Abstract:
The present disclosure provides a semiconductor structure and a storage circuit that implements the storage structure of a magnetoresistive random access memory (MRAM) based on a dynamic random access memory (DRAM) fabrication platform.
Public/Granted literature
- US20220190028A1 SEMICONDUCTOR STRUCTURE AND STORAGE CIRCUIT Public/Granted day:2022-06-16
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