Invention Grant
- Patent Title: Mixed exposure for large die
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Application No.: US17579259Application Date: 2022-01-19
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Publication No.: US11929347B2Publication Date: 2024-03-12
- Inventor: Javier A. Delacruz , Belgacem Haba
- Applicant: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Applicant Address: US CA San Jose
- Assignee: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Current Assignee: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Current Assignee Address: US CA San Jose
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/68 ; H01L23/538 ; H01L25/065

Abstract:
Techniques and arrangements for performing exposure operations on a wafer utilizing both a stepper apparatus and an aligner apparatus. The exposure operations are performed with respect to large composite base dies, e.g., interposers, defined within the wafer, where the interposers will become a part of microelectronic devices by coupling with active dies or microchips. The composite base dies may be coupled to the active dies via “native interconnects” utilizing direct bonding techniques. The stepper apparatus may be used to perform exposure operations on active regions of the composite base dies to provide a fine pitch for the native interconnects, while the aligner apparatus may be used to perform exposure operations on inactive regions of the composite base dies to provide a coarse pitch for interfaces with passive regions of the composite base dies.
Public/Granted literature
- US20220216180A1 MIXED EXPOSURE FOR LARGE DIE Public/Granted day:2022-07-07
Information query
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