- Patent Title: Interconnect structures including a fin structure and a metal cap
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Application No.: US17200024Application Date: 2021-03-12
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Publication No.: US11929314B2Publication Date: 2024-03-12
- Inventor: Chun-Hsien Huang , Peng-Fu Hsu , Yu-Syuan Cai , Min-Hsiu Hung , Chen-Yuan Kao , Ken-Yu Chang , Chun-I Tsai , Chia-Han Lai , Chih-Wei Chang , Ming-Hsing Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/00
Abstract:
In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.
Public/Granted literature
- US20220293503A1 INTERCONNECT STRUCTURES AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-09-15
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