Invention Grant
- Patent Title: Relating to passivation layers
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Application No.: US17857557Application Date: 2022-07-05
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Publication No.: US11929296B2Publication Date: 2024-03-12
- Inventor: Raj Sekar Sethu , Peng Yang , Kumar Sambhawam
- Applicant: Raj Sekar Sethu , Peng Yang , Kumar Sambhawam
- Applicant Address: MY Sarawak
- Assignee: X-FAB SARAWAK SDN. BHD.
- Current Assignee: X-FAB SARAWAK SDN. BHD.
- Current Assignee Address: MY Sarawak
- Agency: Thompson Hine LLP
- Priority: GB 16134 2018.10.03
- The original application number of the division: US16587836 2019.09.30
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/02 ; H01L21/3105 ; H01L21/768 ; H01L23/29
Abstract:
A method of forming a semiconductor device, the method including the steps of providing a metal component having a top surface, and providing a passivation layer over the metal component such that an outer layer of the passivation layer is substantially planar and does not extend below the top surface of the metal component.
Public/Granted literature
- US20220336308A1 RELATING TO PASSIVATION LAYERS Public/Granted day:2022-10-20
Information query
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