Invention Grant
- Patent Title: Two dimension material fin sidewall
-
Application No.: US17859578Application Date: 2022-07-07
-
Publication No.: US11929286B2Publication Date: 2024-03-12
- Inventor: Sami Rosenblatt , Rasit O. Topaloglu
- Applicant: Tessera LLC
- Applicant Address: US CA San Jose
- Assignee: Tessera LLC
- Current Assignee: Tessera LLC
- Current Assignee Address: US CA San Jose
- Agency: HALEY GUILIANO LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/02 ; H01L21/3105 ; H01L21/762 ; H01L21/82 ; H01L21/8238 ; H01L27/088 ; H01L29/06 ; H01L29/16 ; H01L29/165 ; H01L29/24 ; H01L29/51 ; H01L29/66 ; H01L29/778 ; H01L29/78
Abstract:
A semiconductor structure includes fins that have a 2D material, such as Graphene, upon at least the fin sidewalls. The thickness of the 2D material sidewall may be tuned to achieve desired finFET band gap control. Neighboring fins of the semiconductor structure form fin wells. The semiconductor structure may include a fin cap upon each fin and the 2D material is formed upon the sidewalls of the fin and the bottom surface of the fin wells. The semiconductor structure may include a well-plug at the bottom of the fin wells and the 2D material is formed upon the sidewalls and upper surface of the fins. The semiconductor structure may include both fin caps and well-plugs such that the 2D material is formed upon the sidewalls of the fins.
Public/Granted literature
- US20220352376A1 TWO DIMENSION MATERIAL FIN SIDEWALL Public/Granted day:2022-11-03
Information query
IPC分类:
