Invention Grant
- Patent Title: Method for testing memory
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Application No.: US17455300Application Date: 2021-11-17
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Publication No.: US11929137B2Publication Date: 2024-03-12
- Inventor: Yangyang Dai
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010228553.8 2020.03.27
- Main IPC: G11C29/56
- IPC: G11C29/56 ; G06F3/06 ; G06F16/903

Abstract:
The present application provides a method for testing a memory, including the steps of: providing a database, the database including a deviation value between a data strobe signal and a clock signal and a corresponding relationship between the deviation value and a memory parameter; searching the database for a deviation value corresponding to a preset memory parameter when a read command is applied to the memory under the preset memory parameter; acquiring a time value at which an output signal is to be captured according to the deviation value; and capturing the output signal at the time value to perform the testing for the memory.
Public/Granted literature
- US20220075550A1 METHOD FOR TESTING MEMORY Public/Granted day:2022-03-10
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