Invention Grant
- Patent Title: Techniques for memory cell refresh
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Application No.: US17712972Application Date: 2022-04-04
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Publication No.: US11929107B2Publication Date: 2024-03-12
- Inventor: Vincenzo Reina
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/406 ; G11C11/4074

Abstract:
Methods, systems, and devices for techniques for memory cell refresh are described. A memory system may support a low power mode in which the memory system may periodically perform a refresh operation. In some cases, the memory system and a host system coupled with the memory system may support a command to enter the low power mode. As part of the low power mode, the memory system may receive at least one power supply of one or more supported power supplies, such that the memory system may remain active and thus periodically perform the refresh operation. In some cases, the memory system may adjust the periodicity of the refresh operation in response to detecting a triggering event, such as a high temperature, a large system age, or a combination thereof.
Public/Granted literature
- US20230317134A1 TECHNIQUES FOR MEMORY CELL REFRESH Public/Granted day:2023-10-05
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