Invention Grant
- Patent Title: Semiconductor device, and method for manufacturing the same
-
Application No.: US17543914Application Date: 2021-12-07
-
Publication No.: US11894427B2Publication Date: 2024-02-06
- Inventor: Jhen-Yu Tsai
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H10B12/00
Abstract:
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a surface. The surface has a first portion and a second portion protruding from the first portion. The semiconductor device also includes a dielectric layer disposed on the second portion and a gate conductive layer disposed on the dielectric layer.
Public/Granted literature
- US20230178608A1 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-06-08
Information query
IPC分类:
