Invention Grant
- Patent Title: Sputtering target and magnetic film
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Application No.: US16960384Application Date: 2019-05-23
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Publication No.: US11894221B2Publication Date: 2024-02-06
- Inventor: Yasuyuki Iwabuchi , Manami Masuda , Takashi Kosho
- Applicant: JX Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Metals Corporation
- Current Assignee: JX Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: MARSHALL, GERSTEIN & BORUN LLP
- Priority: JP 18150676 2018.08.09
- International Application: PCT/JP2019/020558 2019.05.23
- International Announcement: WO2020/031461A 2020.02.13
- Date entered country: 2020-07-07
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C22C19/07 ; H01F41/18 ; H01F10/16 ; G11B5/65 ; G11B5/851

Abstract:
Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.
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