Invention Grant
- Patent Title: Control amplifying circuit, sense amplifier and semiconductor memory
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Application No.: US17807135Application Date: 2022-06-15
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Publication No.: US11894048B2Publication Date: 2024-02-06
- Inventor: Weibing Shang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2111657770.X 2021.12.31
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/4091 ; G11C11/4094 ; G11C11/4074 ; G11C7/12

Abstract:
A control amplifying circuit includes a power supply output circuit, an isolation control circuit and an amplifying circuit. The power supply output circuit is configured to receive a power supply switching signal, and select one preset voltage value from at least two preset voltage values according to the power supply switching signal to output as a preset power supply signal. The isolation control circuit is configured to receive a control command signal and the preset power supply signal, and generate an isolation control signal according to the control command signal. The amplifying circuit is configured to receive the isolation control signal and a signal to be processed, and amplify the signal to be processed based on the isolation control signal to obtain a target amplified signal.
Public/Granted literature
- US20230223071A1 CONTROL AMPLIFYING CIRCUIT, SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY Public/Granted day:2023-07-13
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