Invention Grant
- Patent Title: Power semiconductor module and power converter
-
Application No.: US17616692Application Date: 2019-08-27
-
Publication No.: US11863166B2Publication Date: 2024-01-02
- Inventor: Junichi Nakashima
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2019/033555 2019.08.27
- International Announcement: WO2021/038724A 2021.03.04
- Date entered country: 2021-12-06
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H01L23/538 ; H01L25/16 ; H01L25/18 ; H02M7/537 ; H03K5/1252 ; H01L23/00

Abstract:
A power semiconductor module includes a semiconductor switching element, a gate control pattern to which a gate electrode of the semiconductor switching element is connected, a source control pattern to which a source electrode of the semiconductor switching element is connected, a capacitor to form a low-pass filter, a capacitor arrangement pattern to which one end of the capacitor is connected, and a wire. The other end of the capacitor is connected to the source control pattern. The wire electrically connects the capacitor arrangement pattern and the gate control pattern.
Public/Granted literature
- US20220311431A1 POWER SEMICONDUCTOR MODULE AND POWER CONVERTER Public/Granted day:2022-09-29
Information query