Invention Grant
- Patent Title: Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias
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Application No.: US17215456Application Date: 2021-03-29
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Publication No.: US11863130B2Publication Date: 2024-01-02
- Inventor: Basim Noori , Marvin Marbell , Qianli Mu , Kwangmo Chris Lim , Michael E. Watts , Mario Bokatius , Jangheon Kim
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H03F3/187
- IPC: H03F3/187 ; H03F1/56 ; H01L23/48 ; H01L23/498 ; H01L23/00 ; H01L29/778 ; H03F3/193
Abstract:
RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.
Public/Granted literature
Information query
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