- Patent Title: III-nitride thermal management based on aluminum nitride substrates
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Application No.: US17068202Application Date: 2020-10-12
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Publication No.: US11862718B2Publication Date: 2024-01-02
- Inventor: Gregg H. Jessen
- Applicant: BAE Systems Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Sand, Sebolt & Wernow LPA
- Agent Gary McFaline
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/10 ; H01L29/66 ; H01L29/15
Abstract:
Techniques, a system, and architecture are disclosed for top side transistor heat dissipation. The heat dissipation is done through single crystal epitaxially grown layer such as AlN. The architecture may include a back side heat sink to increase thermal dissipation as well. The architecture may further include a pseudomorphic channel layer that is lattice matched to the substrate.
Public/Granted literature
- US20220115524A1 III-NITRIDE THERMAL MANAGEMENT BASED ON ALUMINUM NITRIDE SUBSTRATES Public/Granted day:2022-04-14
Information query
IPC分类:
