Invention Grant
- Patent Title: Method for manufacturing buried gate and method for manufacturing semiconductor device
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Application No.: US17371184Application Date: 2021-07-09
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Publication No.: US11862697B2Publication Date: 2024-01-02
- Inventor: Er-Xuan Ping , Jie Bai , Mengmeng Yang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010365052.4 2020.04.30
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/762 ; H10B12/00 ; H01L21/02 ; H01L29/40
Abstract:
A method for manufacturing a buried gate and a method for manufacturing a semiconductor device are disclosed. The method for manufacturing the buried gate includes that: a trench is provided on an active region of a substrate; a gate structure is filled in a bottom of the trench, and a trench sidewall above the gate structure is exposed; an epitaxial layer is grown on the exposed trench sidewall with an epitaxial growth process, in which the epitaxial layer does not close the trench; and an isolation layer is filled in the trench.
Public/Granted literature
- US20210343846A1 METHOD FOR MANUFACTURING BURIED GATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-11-04
Information query
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