A transistor device includes field plate contacts that electrically connect a final metallization layer to field electrodes in underlying trenches, and mesa contacts that electrically connect the final metallization layer to semiconductor mesas confined by the trenches. Each field plate contact is divided into field plate contact segments that are separated from one another. Each mesa contact is divided into mesa contact segments that are separated from one another. In a first area adjacent to an end of the trenches, a first line that runs perpendicular to the trenches intersects a first field plate contact segment of the field plate contacts and a first mesa contact segment of the mesa contacts. In a second area spaced inward from the first area, a second line that runs perpendicular to the trenches intersects a second field plate contact segment of the field plate contacts and a second mesa contact segment of the mesa contacts.