Invention Grant
- Patent Title: Wafer and method of manufacturing wafer
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Application No.: US17665166Application Date: 2022-02-04
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Publication No.: US11862685B2Publication Date: 2024-01-02
- Inventor: Jong Hwi Park , Kap-Ryeol Ku , Jung-Gyu Kim , Jung Woo Choi , Myung-Ok Kyun
- Applicant: SENIC Inc.
- Applicant Address: KR Cheonan-si
- Assignee: SENIC INC.
- Current Assignee: SENIC INC.
- Current Assignee Address: KR Cheonan-si
- Agency: NSIP Law
- Priority: KR 20200086798 2020.07.14
- The original application number of the division: US17355663 2021.06.23
- Main IPC: H01L21/16
- IPC: H01L21/16 ; H01L29/16 ; G01N23/207 ; H01L21/02 ; H01L21/66
Abstract:
The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.
Public/Granted literature
- US20220157944A1 WAFER AND METHOD OF MANUFACTURING WAFER Public/Granted day:2022-05-19
Information query
IPC分类:
