A system and method for efficiently creating layout for memory bit cells are described. In various implementations, cells of a library use Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. One or more of these cells use a dual polarity local interconnect power connection to receive a voltage reference level from a backside bus. For example, a power supply reference voltage level is received by a p-type device from a backside bus where the connection traverses both a p-type local interconnect layer and an n-type local interconnect layer.