Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US17211109Application Date: 2021-03-24
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Publication No.: US11862638B2Publication Date: 2024-01-02
- Inventor: Shahaji B. More , Chandrashekhar Prakash Savant
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L21/8234

Abstract:
In an embodiment, a device includes: a first fin extending from a substrate; a second fin extending from the substrate; a gate spacer over the first fin and the second fin; a gate dielectric having a first portion, a second portion, and a third portion, the first portion extending along a first sidewall of the first fin, the second portion extending along a second sidewall of the second fin, the third portion extending along a third sidewall of the gate spacer, the third portion and the first portion forming a first acute angle, the third portion and the second portion forming a second acute angle; and a gate electrode on the gate dielectric.
Information query
IPC分类: