Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17644383Application Date: 2021-12-15
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Publication No.: US11862586B2Publication Date: 2024-01-02
- Inventor: Mizuki Tamura
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 21100408 2021.06.16
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/00

Abstract:
In one embodiment, a semiconductor device includes a first insulator, a first pad provided in the first insulator, a second insulator provided on the first insulator, and a second pad provided on the first pad in the second insulator. Furthermore, the first insulator includes a first film that is in contact with the first pad and the second insulator, and a second film provided at an interval from the first pad and the second insulator, and including a portion provided at a same height as at least a portion of the first pad.
Public/Granted literature
- US20220406739A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-12-22
Information query
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