Invention Grant
- Patent Title: RF devices with enhanced performance and methods of forming the same
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Application No.: US16426527Application Date: 2019-05-30
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Publication No.: US11862532B2Publication Date: 2024-01-02
- Inventor: Julio C. Costa , Michael Carroll
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L23/42
- IPC: H01L23/42 ; H01L23/31 ; H01L23/522 ; H01L23/66 ; H01L23/00 ; H01L21/56 ; H01L21/762 ; H01L21/84
Abstract:
The present disclosure relates to a radio frequency device that includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion, first bump structures, a first mold compound, and a second mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The BEOL portion is formed underneath the FEOL portion, and the first bump structures and the first mold compound are formed underneath the BEOL portion. Each first bump structure is partially encapsulated by the first mold compound, and electrically coupled to the FEOL portion via connecting layers within the BEOL portion. The second mold compound resides over the active layer without a silicon material, which has a resistivity between 5 Ohm-cm and 30000 Ohm-cm, in between.
Public/Granted literature
- US12165951B2 RF devices with enhanced performance and methods of forming the same Public/Granted day:2024-12-10
Information query
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