A semiconductor structure manufacturing method according to the embodiments of the present application includes the following steps of: providing a semiconductor substrate; forming a first reaction layer on the semiconductor substrate; forming a second reaction layer on the first reaction layer; and thermally reacting at least a portion of the first reaction layer with at least a portion of the second reaction layer, to form an amorphous diffusion barrier layer. This amorphous diffusion barrier layer is an amorphous body with no grain boundary therein. As a result, the diffusion path for metal atoms is cut off, thereby improving the barrier effect of the barrier layer efficiently and solving the circuit performance issue caused by metal atom diffusion.