- Patent Title: Silica particle and production method therefor, silica sol, polishing composition, polishing method, method for producing semiconductor wafer and method for producing semiconductor device
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Application No.: US17402013Application Date: 2021-08-13
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Publication No.: US11862470B2Publication Date: 2024-01-02
- Inventor: Tomohiro Kyotani , Eiji Dejima , Naoko Sumitani , Tomohiro Kato , Takeshi Sawai
- Applicant: Mitsubishi Chemical Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 19029142 2019.02.21 JP 19029143 2019.02.21
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/304 ; H01L21/306 ; B24B37/04 ; C01B33/14

Abstract:
An object of the present invention is to provide a silica particle having excellent polishing characteristics and storage stability, a method for producing the silica particle, a silica sol containing the silica particles, and a polishing composition containing the silica sol. Another object of the present invention is to provide a polishing method, a method for producing a semiconductor wafer, and a method for producing a semiconductor device, which are excellent in productivity of an object to be polished. The silica particle in the present invention satisfies formula (1): y≥4.2 where a d value measured by wide-angle X-ray scattering is y Å.
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