Invention Grant
- Patent Title: Method of forming oxide layer on a doped substrate using nitridation and oxidation process
-
Application No.: US17851645Application Date: 2022-06-28
-
Publication No.: US11862461B2Publication Date: 2024-01-02
- Inventor: Tzung-Han Lee
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2111625986.8 2021.12.28
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/308
Abstract:
A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes: a base is provided, in which the base includes a first doped area and a second doped area, and an isolation structure is provided between the first doped area and the second doped area; nitridation treatment is performed on the first doped area and the second doped area; and oxidation treatment is performed on the first doped area and the second doped area subjected to the nitridation treatment, to form a first gate oxide layer and a second gate oxide layer respectively.
Public/Granted literature
- US20230207315A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2023-06-29
Information query
IPC分类:
