Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
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Application No.: US17330729Application Date: 2021-05-26
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Publication No.: US11862441B2Publication Date: 2024-01-02
- Inventor: Hironari Sasagawa , Sho Kumakura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- Priority: JP 20092244 2020.05.27
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01J37/32 ; H01L21/311 ; H01L21/3065
Abstract:
A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.
Public/Granted literature
- US20210375602A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2021-12-02
Information query
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