According to one embodiment, a pattern formation method includes placing an imprint resist film on a substrate, then imprinting a pattern in the imprint resist film. The pattern has a first loop section in a first end portion and a second loop section in a second end portion. After the imprint resist film has been patterned, it is selectively irradiated between the first loop section and the second loop section. The imprint resist film is then etched under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film.