Systems, methods, circuits, and apparatus including computer-readable mediums for managing page buffer circuits in memory devices are provided. In one aspect, a memory device includes a memory cell array, memory cell lines connecting respective lines of memory cells, and a page buffer circuit including page buffers coupled to the memory cell lines. Each page buffer includes a sensing latch circuit and a storage latch circuit. The sensing latch circuit includes a sensing transistor coupled to a sensing node and at least one sensing latch unit having a first node coupled to the sensing node and a second node coupled to a first terminal of the sensing transistor. The storage latch circuit includes at least one storage latch unit having third and fourth nodes coupled to the sensing node and a gate terminal of the sensing transistor. A second terminal of the sensing transistor is coupled to a ground.