Invention Grant
- Patent Title: Sense amplifier, storage device and read-write method
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Application No.: US17445607Application Date: 2021-08-22
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Publication No.: US11862283B2Publication Date: 2024-01-02
- Inventor: Ying Wang , Sunsoo Chi
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010615819.4 2020.06.30
- Main IPC: G11C7/08
- IPC: G11C7/08 ; G11C7/14 ; G11C7/06 ; G11C7/12 ; G11C11/4091

Abstract:
A sense amplifier includes a first switch unit, a second switch unit, and an amplifier-latch module. A first port of the amplifier-latch module is electrically connected, via the first switch unit, to a bit line connected with a storage unit, and a second port of the amplifier-latch module is electrically connected to a reference voltage signal via the second switch unit. The amplifier-latch module is configured to amplify a signal in a sensing amplification phase. The first switch unit is configured to transmit a voltage on the bit line to the first port before the sensing amplification phase. The second switch unit is configured to transmit the reference voltage signal to the second port before the sensing amplification phase, and disconnect an electrical connection between the reference voltage signal and the second port in the sensing amplification phase.
Public/Granted literature
- US20210407558A1 SENSE AMPLIFIER, STORAGE DEVICE AND READ-WRITE METHOD Public/Granted day:2021-12-30
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