Invention Grant
- Patent Title: Word line lead-out structure and method for preparing same
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Application No.: US17400456Application Date: 2021-08-12
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Publication No.: US11862281B2Publication Date: 2024-01-02
- Inventor: ChihCheng Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TCHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TCHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010468064.X 2020.05.28
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C5/06 ; G11C5/02

Abstract:
A word line lead-out structure and a method for preparing the same are provided. A word line extending along an X-axis direction is formed on a substrate. A contact hole covering the word line along a Y-axis direction is formed, the X-axis direction being perpendicular to the Y-axis direction. A metal line covering the contact hole is formed, the contact hole being located between the word line and the metal line and being contacted with the word line and the metal line. The contact area between the contact hole and the metal line is larger than that between the contact hole and the word line.
Public/Granted literature
- US20210375329A1 WORD LINE LEAD-OUT STRUCTURE AND METHOD FOR PREPARING SAME Public/Granted day:2021-12-02
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