Invention Grant
- Patent Title: Method and device for determining repaired line and repairing line in memory, storage medium, and electronic device
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Application No.: US17651446Application Date: 2022-02-17
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Publication No.: US11862279B2Publication Date: 2024-01-02
- Inventor: Bo Yang , Xiaodong Luo
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2110824854.1 2021.07.21
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/10 ; G11C29/44 ; G11C29/46
Abstract:
A method for determining a repaired line and a repairing line in a memory includes the following: writing first preset data sets into respective lines in a normal region, and writing second preset data sets into respective lines in a redundancy region; repairing the lines in the normal region by using the lines in the redundancy region; reading data from the lines in the normal region after repairing; and determining a repaired line in the normal region and a repairing line in the redundancy region according to the data of the lines in the normal region, the data of the lines in the normal region after repairing, or the data of the lines in the redundancy region.
Public/Granted literature
Information query
