Invention Grant
- Patent Title: Memory device with failed main bank repair using redundant bank
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Application No.: US17502475Application Date: 2021-10-15
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Publication No.: US11862270B2Publication Date: 2024-01-02
- Inventor: Sangoh Lim
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C29/12
- IPC: G11C29/12 ; G11C29/44 ; G11C29/00 ; H03K19/173

Abstract:
In certain aspects, a memory device includes an array of memory cells, an input/output (I/O) circuit, and control logic coupled to the I/O circuit. The array of memory cells includes a plurality of banks including a plurality of main banks and a redundant bank. The I/O circuit is coupled to each pair of adjacent banks of the plurality of banks and configured to direct a piece of data to or from either bank of each pair of adjacent banks. The control circuit is configured to select one bank of each pair of adjacent banks based on bank fail information indicative of a failed main bank of the plurality of main banks. The control circuit is further configured to control the I/O circuit to direct the piece of data to or from the selected bank of each pair of adjacent banks.
Public/Granted literature
- US20220310185A1 MEMORY DEVICE WITH FAILED MAIN BANK REPAIR USING REDUNDANT BANK Public/Granted day:2022-09-29
Information query