Invention Grant
- Patent Title: Reading and writing method of memory device and memory device
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Application No.: US17470879Application Date: 2021-09-09
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Publication No.: US11862229B2Publication Date: 2024-01-02
- Inventor: Shu-Liang Ning
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010919721.8 2020.09.04
- Main IPC: G11C11/4076
- IPC: G11C11/4076 ; G11C11/409 ; G01K13/00 ; H01L25/18 ; H01L25/065
Abstract:
A reading and writing method for a memory device and a memory device are provided. The memory device includes a memory chip. The reading and writing method of the memory device includes that: during operation of the memory chip, the temperature of the memory chip is measured, and a writing recovery time of the memory chip is adjusted according to the temperature.
Public/Granted literature
- US20220076730A1 READING AND WRITING METHOD OF MEMORY DEVICE AND MEMORY DEVICE Public/Granted day:2022-03-10
Information query
IPC分类:
