Invention Grant
- Patent Title: Power supply circuit and memory
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Application No.: US17668638Application Date: 2022-02-10
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Publication No.: US11862228B2Publication Date: 2024-01-02
- Inventor: Rumin Ji
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110807082.0 2021.07.16
- Main IPC: G11C8/14
- IPC: G11C8/14 ; G11C11/4074

Abstract:
A power supply circuit and a memory are provided. The power supply circuit includes a voltage source, multiple power supply circuits and a control circuit. The multiple power supply circuits are connected to the voltage source. If the voltage source is effective and the multiple power supply circuits are in an enable state, a voltage of a power supply terminal is pulled up to a preset voltage, and power is supplied to the load units during the pulling up process. A first-type power circuit enters the enable state if a first enable signal is received, and each of second-type power supply circuits enters the enable state if second enable signal is received.
Public/Granted literature
- US20230014679A1 POWER SUPPLY CIRCUIT AND MEMORY Public/Granted day:2023-01-19
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