Invention Grant
- Patent Title: Refresh circuit and memory
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Application No.: US17456635Application Date: 2021-11-27
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Publication No.: US11862222B2Publication Date: 2024-01-02
- Inventor: Yinchuan Gu , Geyan Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2110128762.X 2021.01.29
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408 ; H03K19/20

Abstract:
A refresh circuit includes: a refresh control module configured to receive a refresh command to output a row address refresh signal, the row address refresh signal being outputted a number of times of a preset value each time the refresh command is received; and further configured to receive a temperature signal to adjust the preset value, the higher a temperature represented by the temperature signal, the greater the adjusted preset value; a row addresser configured to receive the row address refresh signal and output a to-be-refreshed single-row address; and an array refresh device configured to perform a single-row refresh operation according to the single-row address and output a single-row refresh end signal after the end of single-row refresh.
Public/Granted literature
- US20220246203A1 REFRESH CIRCUIT AND MEMORY Public/Granted day:2022-08-04
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