According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.