Invention Grant
- Patent Title: High-frequency circuit
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Application No.: US17132090Application Date: 2020-12-23
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Publication No.: US11750153B2Publication Date: 2023-09-05
- Inventor: Masamichi Tokuda
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP 19237083 2019.12.26
- Main IPC: H03F3/19
- IPC: H03F3/19 ; H03F1/56 ; H03F1/02

Abstract:
A high-frequency circuit includes an amplifier, a power distributor disposed on an output route of the amplifier, a first by-pass route that bypasses the amplifier, a second by-pass route that bypasses the power distributor, a first switch and a second switch disposed in series on the first by-pass route, and a third switch disposed in series on the second by-pass route. The first by-pass route is connected to a first node on a route connecting a signal input terminal and the amplifier and a second node on a route connecting the amplifier and the power distributor. The second by-pass route is connected to a third node between the first switch and the second switch and a fourth node on an output route of the power distributor.
Public/Granted literature
- US20210203283A1 HIGH-FREQUENCY CIRCUIT Public/Granted day:2021-07-01
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