Invention Grant
- Patent Title: Power semiconductor module with laser-welded leadframe
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Application No.: US17604717Application Date: 2020-03-12
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Publication No.: US11749633B2Publication Date: 2023-09-05
- Inventor: Niko Pavlicek , Fabian Mohn , Markus Thut , Swen Koenig
- Applicant: Hitachi Energy Switzerland AG
- Applicant Address: CH Baden
- Assignee: Hitachi Energy Switzerland AG
- Current Assignee: Hitachi Energy Switzerland AG
- Current Assignee Address: CH Baden
- Agency: Slater Matsil, LLP
- Priority: EP 170007 2019.04.18
- International Application: PCT/EP2020/056641 2020.03.12
- International Announcement: WO2020/212031A 2020.10.22
- Date entered country: 2021-10-18
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L25/07

Abstract:
A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.
Public/Granted literature
- US20220406745A1 Power Semiconductor Module with Laser-Welded Leadframe Public/Granted day:2022-12-22
Information query
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