Invention Grant
- Patent Title: Memory, memory system, and operation method of memory system
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Application No.: US17354482Application Date: 2021-06-22
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Publication No.: US11748007B2Publication Date: 2023-09-05
- Inventor: Munseon Jang , Hoiju Chung , Jang Ryul Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C29/00

Abstract:
A memory includes: a non-volatile memory suitable for storing a defect address; a register suitable for receiving and storing the defect address from the non-volatile memory during a boot-up operation, and receiving and storing an address that is input from an exterior during a register access operation; a comparison circuit suitable for comparing the address stored in the register with an address that is input from the exterior to produce a comparison result; redundant memory cells that are accessed according to the comparison result of the comparison circuit and a redundancy activation bit; and normal memory cells that are accessed according to the comparison result of the comparison circuit and the redundancy activation bit.
Public/Granted literature
- US20210397355A1 MEMORY, MEMORY SYSTEM, AND OPERATION METHOD OF MEMORY SYSTEM Public/Granted day:2021-12-23
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