The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of:



i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed.

AnBmXo  [Chemical Formula 1]

wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.




According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.