Invention Grant
- Patent Title: Semiconductor device having doped seed layer and method of manufacturing the same
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Application No.: US17074952Application Date: 2020-10-20
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Publication No.: US11721752B2Publication Date: 2023-08-08
- Inventor: Chi-Ming Chen , Po-Chun Liu , Chung-Yi Yu , Chia-Shiung Tsai , Ru-Liang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L21/02 ; H01L21/265
Abstract:
A semiconductor device includes a doped substrate and a seed layer in direct contact with the substrate. The seed layer includes a first seed sublayer having a first lattice structure. The first seed layer is doped with carbon. The seed layer further includes a second seed sublayer over the first see layer, wherein the second seed layer has a second lattice structure. The semiconductor device further includes a graded layer in direct contact with the seed layer. The graded layer includes a first graded sublayer including AlGaN having a first Al:Ga ratio; a second graded sublayer including AlGaN having a second Al:Ga ratio different from the first Al:Ga ratio; and a third graded sublayer over including AlGaN having a third Al:Ga ratio different from the second Al:Ga ratio. The semiconductor device includes a channel layer over the graded layer. The semiconductor device includes an active layer over the channel layer.
Public/Granted literature
- US20210036140A1 SEMICONDUCTOR DEVICE HAVING DOPED SEED LAYER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-02-04
Information query
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