Provided is an insulated gate bipolar transistor power device. The IGBT power device includes a gate dielectric layer located above the two p-type body regions and the n-type drift region between the two p-type body regions, an n-type floating gate located above the gate dielectric layer; a gate located above the gate dielectric layer and the n-type floating gate; an insulating dielectric layer between the gate and the n-type floating gate; a first opening located in the gate dielectric layer, where the n-type floating gate is in contact with one of the two p-type body regions through the first opening to form a p-n junction diode; and a second opening located in the gate dielectric layer, where the n-type floating gate is in contact with the other of the two p-type body regions through the second opening to form the p-n junction diode.