Invention Grant
- Patent Title: Nonvolatile memory having multiple narrow tips at floating gate
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Application No.: US17392269Application Date: 2021-08-03
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Publication No.: US11721731B2Publication Date: 2023-08-08
- Inventor: Zar Lwin Zin , Shyue Seng Tan , Eng Huat Toh
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent David Cain
- Main IPC: H01L29/423
- IPC: H01L29/423 ; G11C8/14 ; H01L29/08 ; H01L21/28 ; H01L29/788 ; H01L29/66 ; G11C16/14 ; H10B41/10
Abstract:
A nonvolatile memory device is provided. The device comprises an active region, a floating gate over the active region and a wordline next to the floating gate. The floating gate has at least two narrow tips adjacent to the wordline and a portion of the floating gate between the narrow tips has a concave profile.
Public/Granted literature
- US20230045062A1 NONVOLATILE MEMORY HAVING MULTIPLE NARROW TIPS AT FLOATING GATE Public/Granted day:2023-02-09
Information query
IPC分类:
