Invention Grant
- Patent Title: Quantum well stacks for quantum dot devices
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Application No.: US17364985Application Date: 2021-07-01
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Publication No.: US11721724B2Publication Date: 2023-08-08
- Inventor: Nicole K. Thomas , James S. Clarke , Jessica M. Torres , Ravi Pillarisetty , Kanwaljit Singh , Payam Amin , Hubert C. George , Jeanette M. Roberts , Roman Caudillo , David J. Michalak , Zachary R. Yoscovits , Lester Lampert
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/82

Abstract:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.
Public/Granted literature
- US20210328019A1 QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES Public/Granted day:2021-10-21
Information query
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