Invention Grant
- Patent Title: Memory system, memory device, and control method of memory system for generating information from a threshold voltage
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Application No.: US17176213Application Date: 2021-02-16
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Publication No.: US11694750B2Publication Date: 2023-07-04
- Inventor: Yasunori Arai , Norio Aoyama
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20060809 2020.03.30
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G06F21/60 ; G11C11/56 ; H10B41/27 ; H10B43/27

Abstract:
According to one embodiment, a memory system includes: a memory device to store data; and a controller to control an operation for the memory device. The memory device executes a program operation by a first program voltage on memory cells belonging to a first address of the memory device; detect at least one first memory cell among the memory cells by using a first determination level and a second determination level different from the first determination level, the at least one first memory cell having a threshold voltage of a value different from a value between the first determination level and the second determination level; and generate unique information of the memory device, based on a position of the first memory cell in the first address.
Public/Granted literature
- US20210304819A1 MEMORY SYSTEM, MEMORY DEVICE, AND CONTROL METHOD OF MEMORY SYSTEM Public/Granted day:2021-09-30
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