Invention Grant
- Patent Title: Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip and headlight comprising an optoelectronic semiconductor chip
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Application No.: US16327691Application Date: 2017-08-02
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Publication No.: US11670742B2Publication Date: 2023-06-06
- Inventor: Britta Göötz , Alexander Linkov
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GmbH
- Current Assignee: OSRAM OLED GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE 2016115533.0 2016.08.22
- International Application: PCT/EP2017/069534 2017.08.02
- International Announcement: WO2018/036769A 2018.03.01
- Date entered country: 2019-02-22
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L27/15 ; F21S41/00 ; H01L25/075 ; H01L25/16 ; H01L33/56 ; H01L33/58 ; H01L33/08

Abstract:
An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having a plurality of pixels, the semiconductor layer sequence comprising an active layer configured to generate electromagnetic radiation of a first wavelength range and a plurality of conversion elements, wherein each conversion element is configured to convert the radiation of the first wavelength range into radiation of a second wavelength range, wherein each pixel has a radiation exit surface and a conversion element is arranged on each radiation exit surface, and wherein each conversion element has a greater thickness in a central region than in a peripheral region.
Public/Granted literature
Information query
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