Invention Grant
- Patent Title: Packages formed using RDL-last process
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Application No.: US16939879Application Date: 2020-07-27
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Publication No.: US11670617B2Publication Date: 2023-06-06
- Inventor: Ming-Fa Chen , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15693950 2017.09.01
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/00 ; H01L23/467 ; H01L23/473 ; H01L23/367 ; H01L23/538 ; H01L23/48 ; H01L23/00 ; H01L23/498

Abstract:
A method includes bonding a first device die and a second device die to a substrate, and filling a gap between the first device die and the second device die with a gap-filling material. A top portion of the gap-filling material covers the first device die and the second device die. Vias are formed to penetrate through the top portion of the gap-filling material. The vias are electrically coupled to the first device die and the second device die. The method further includes forming redistribution lines over the gap-filling material using damascene processes, and forming electrical connectors over and electrically coupling to the redistribution lines.
Information query
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