Invention Grant
- Patent Title: Silicon heater bonded to a test wafer
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Application No.: US16698379Application Date: 2019-11-27
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Publication No.: US11668665B2Publication Date: 2023-06-06
- Inventor: Shigeru Kasai
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 2018223959 2018.11.29
- Main IPC: G01N25/18
- IPC: G01N25/18 ; H01L23/34 ; H01L23/36 ; H01L23/00

Abstract:
A test wafer according to an embodiment of the present disclosure is a test wafer used for simulation of heat emission of devices on a wafer, and includes a silicon wafer and a silicon heater bonded to a surface of the silicon wafer.
Public/Granted literature
- US20200173942A1 TEST WAFER AND METHOD FOR MANUFACTURING SAME Public/Granted day:2020-06-04
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