Nonvolatile tunable capacitive processing unit
Abstract:
In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.
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